IMS 2007 was held in Honolulu, Hawaii (USA), June 3-8, 2007.
MTT Technical Committee 17 on HF, VHF, and UHF Technology sponsored (co-spondored) the following IMS sessions and workshops in Honolulu.
Workshop WMJ "Will Wide Band-Gap Power Transistors Render Silicon Power Transistors Obsolete?" to consider the use of Wide band-gap power transistors based on GaN and SiC in RF applications.
Workshop WMF "Theory and Design of Phase Locked Loops"” as a laboratory hands-on course with live hardware and software demonstrations.
Session TU3A "Advances in RF Power Amplifier Technology"” including:
- A Highly Efficient UHF Power Amplifier Using GaAs FETs for Space Applications
- Model for the Low-Frequency Performance of Ferrite-Loaded Balun Transformers
- Class-E Amplifier Design Equations for Maximizing the Frequency Utilization of a Device
- UHF-Band Long-Pulse Radar Power Amplifiers using Push-Pull and Balanced Configurations
- Class-E Silicon Carbide VHF Power Amplifier
MTT-17 10th Anniversary Reception
Technical committee (MTT-17) for HF, VHF, and UHF technology was created at the International Microwave Symposium IMS'97 in Denver to serve the needs of some 26,000 RF engineers who work at frequencies below 1 GHz.
At IMS 2007 (Hawaii, June 2007) we commemorated our TEN YEARS of existence.
To celebrate its tenth anniversary, Technical Committee MTT-17 presented a talk on "Trends in Magnetic Resonance Imaging (MRI)"” by J. Thomas Vaughn. Dr. Vaughn is a professor at the University of Minnesota and a recognized expert on the RF aspects of MRI, an important tool for medical diagnostics and other applications and a major application of HF/VHF/UHF technology. [Download PDF (9MB) of the conference].
Ham Radio Social
All radio amateurs attending this event enjoyed the presentation by Al Katz, K2UYH, on earth-moon-earth communication, also known as EME or moon bounce
Interactive Forum Session WEP1D "HF/VHF/UHF Technologies and Applications" including:”
- Low-Pass Active Filter Enabling DVB-H/T and GSM Standard Coexistence
- Adjacent-Channel Power Contributions of Silicon MOSFET Switches in RF and Microwave Systems
- High-Frequency Power Amplifiers without Ground
- 0.25µm CMOS Dual Feedback Wideband UHF Low-Noise Amplifier.